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InGaAs single-photon array detector component

InGaAs single-photon array detector component

Key Advantage
The spectral response range is 0.95~1.65 μm.
It is enclosed in a lightweight and compact metal casing.
The pixels operate independently and freely.
The pixels can detect weak photon signals.
The dead time and Geiger avalanche signal detection threshold are adjustable.

Typical Applications:
Distance measurement through fog, haze, and smoke
Near-infrared laser warning
Long-range laser ranging
Long-distance space laser communication

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The product consists of a detector module, which is assembled by flip-chip interconnecting a 4x4 array of InGaAs single-photon avalanche diode (SPAD) chips and a CMOS main passive quenching circuit chip, along with a voltage inverter module, a cooling module, and a signal control module. In Geiger-mode operation, each pixel of the detector component operates independently and freely, detecting weak light signals in the near-infrared wavelength range of 0.95 to 1.65 micrometers and providing real-time output in TTL electrical signals.

Technical ParametersTechnical Index
Device TypeInGaAs APD
Array Size4x4
Pixel Size100μm x 100μm
Photosensitive Area Size85μm x 85μm
Optical WindowQuartz optical window
Distance from Photosensitive Surface to Optical Window4mm (window thickness: 1mm)
Operating Wavelength0.95μm to 1.65μm
Detection Efficiency≥10% (at 1.57±0.05μm)
Dark Count Rate≤10KHz
Time Jitter≤500ps
Dead TimeAdjustable from 100 to 1000ns
Effective Pixel Rate100%
Operating Temperature-40°C to +55°C
Storage Temperature-40°C to +70°C
Power Consumption ≤15W